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BSP52T1G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Small-Signal Darlington Transistor - ON Semiconductor

भाग संख्या BSP52T1G
समारोह NPN Small-Signal Darlington Transistor
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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<?=BSP52T1G?> डेटा पत्रक पीडीएफ

BSP52T1G pdf
BSP52T1G, BSP52T3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(IC = 100 mA, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 mA, IC = 0)
Collector-Emitter Cutoff Current
(VCE = 80 V, VBE = 0)
Emitter-Base Cutoff Current
(VEB = 4.0 V, IC = 0)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 150 mA, VCE = 10 V)
(IC = 500 mA, VCE = 10 V)
Collector-Emitter Saturation Voltage
(IC = 500 mA, IB = 0.5 mA)
Base-Emitter Saturation Voltage
(IC = 500 mA, IB = 0.5 mA)
SWITCHING CHARACTERISTICS
Rise Time
(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA)
Delay Time
(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA)
Storage Time
(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA, IB2 = 0.15 mA)
Fall Time
(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA, IB2 = 0.15 mA)
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
Symbol
Min
Typ
Max Unit
V(BR)CBO
V
90
V(BR)EBO
V
5.0
ICES
mA
− − 10
IEBO
mA
− − 10
hFE
1000
2000
VCE(sat)
V
1.3
VBE(sat)
V
1.9
tr ns
155
td ns
205
ts ns
420
tf ns
365
http://onsemi.com
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डाउनलोड[ BSP52T1G Datasheet.PDF ]


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