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BCW68GL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - General Purpose Transistors - ON Semiconductor

भाग संख्या BCW68GL
समारोह General Purpose Transistors
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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BCW68GL pdf
BCW68GL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, VEB = 0)
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
Collector Cutoff Current
(VCE= −45 Vdc, IE = 0)
(VCE= −45 Vdc, IB = 0, TA = 150°C)
Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
−45
− Vdc
V(BR)CES
−60
− Vdc
V(BR)EBO
−5.0
− Vdc
ICES
IEBO
− − −20 nAdc
− − −10 mAdc
− − −20 nAdc
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
(IC = −300 mAdc, VCE = −1.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
Base−Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
hFE
120 − 400
160 −
60 −
VCE(sat) − − −0.7 Vdc
VBE(sat) − − −2.0 Vdc
Current−Gain − Bandwidth Product
(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz)
fT
100 −
− MHz
Output Capacitance
(VCB= −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
− − 18 pF
Input Capacitance
(VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo − − 105 pF
Noise Figure
(IC= −0.2 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF − − 10 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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