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2SC6095 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Bipolar Transistor - ON Semiconductor

भाग संख्या 2SC6095
समारोह Bipolar Transistor
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=2SC6095?> डेटा पत्रक पीडीएफ

2SC6095 pdf
2SC6095
Continued from preceding page.
Parameter
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
IB
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm2×0.8mm)
Tc=25°C
Ratings
500
1.3
3.5
150
--55 to +150
Unit
mA
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)1
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=70V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=100mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
IC=1A, IB=50mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=10μA, IE=0A
IC=100μA, RBE=0Ω
IC=1mA, RBE=
IE=10μA, IC=0A
See specied Test Circuit.
Switching Time Test Circuit
PW=20μs
D.C.1%
INPUT VR10
IB1
IB2
RB
OUTPUT
RL
50Ω +
100μF
VBE= --5V
+
470μF
VCC=40V
IC=10IB1= --10IB2=0.5A
Ratings
min typ
300
350
14
100
90
0.9
120
120
80
6.5
40
920
32
max
1
1
600
150
135
1.2
Unit
μA
μA
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
Ordering Information
Device
2SC6095-TD-E
Package
PCP
Shipping
1,000pcs./reel
memo
Pb Free
No. A0411-2/7

विन्यास 7 पेज
डाउनलोड[ 2SC6095 Datasheet.PDF ]


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