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2SB1121 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Bipolar Transistor - ON Semiconductor

भाग संख्या 2SB1121
समारोह Bipolar Transistor
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=2SB1121?> डेटा पत्रक पीडीएफ

2SB1121 pdf
Continued from preceding page.
Parameter
Collector Dissipation
Junction Temperature
Storage Temperature
2SB1121
Symbol
Conditions
PC When mounted on ceramic substrate (250mm2×0.8mm)
Tj
Tstg
Ratings
500
1.3
150
-55 to +150
Unit
mW
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=-20V, IE=0A
VEB=-4V, IC=0A
VCE=-2V, IC=-100mA
VCE=-2V, IC=-1.5A
VCE=-10V, IC=-50mA
VCB=-10V, f=1MHz
IC=-1.5A, IB=-75mA
IC=-1.5A, IB=-75mA
IC=-10μA, IE=0A
IC=-1mA, RBE=
IE=-10μA, IC=0A
See specified Test Circuit
*: The 2SB1121 is classified by 100mA hFE as follows:
Rank
S
T
hFE
140 to 280
200 to 400
Ratings
min typ
140*
65
-30
-25
-6
150
32
-0.35
-0.85
60
350
25
max
-0.1
-0.1
400*
Unit
μA
μA
MHz
pF
-0.6 V
-1.2 V
V
V
V
ns
ns
ns
Switching Time Test Circuit
Ordering Information
Device
2SB1121S-TD-E
2SB1121T-TD-E
Package
PCP
Shipping
1,000pcs./reel
Memo
Pb-Free
No. 1787-2/4

विन्यास 4 पेज
डाउनलोड[ 2SB1121 Datasheet.PDF ]


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