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NE55410GR डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL SILICON POWER LDMOS FET - Renesas

भाग संख्या NE55410GR
समारोह N-CHANNEL SILICON POWER LDMOS FET
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
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<?=NE55410GR?> डेटा पत्रक पीडीएफ

NE55410GR pdf
NE55410GR
ORDERING INFORMATION
Part Number
NE55410GR
Order Number
NE55410GR-T3-AZ
Package
16-pin plastic HTSSOP
(Pb-Free) Note
Marking
Supplying Form
55410
Embossed tape 12 mm wide
Pin 1 and 8 indicates pull-out direction of tape
Qty 1 kpcs/reel
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE55410GR
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
S
9 S Q1
10
11 S
12
S
13 S Q2
14
15
16 S
S
S8
7
S6
5
4
3
2
S1
S
Pin No.
Pin Name
Pin No.
Pin Name
1 Source 9 Source
2 Drain (Q2) 10 Gate (Q1)
3
Drain (Q2)
11
Source
4 Drain (Q2) 12 Drain (Q1)
5
Drain (Q2)
13
Source
6
Source
14 Gate (Q2)
7 Gate (Q1) 15 Gate (Q2)
8 Source 16 Source
Remark All the terminals of a Q2 connected to a
circuit. Backside : Source (S)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Drain Current (Q1)
ID (Q1)
Drain Current (Q2)
ID (Q2)
Total Device Dissipation (Tcase = 25°C) Ptot
Input Power (Q1)
Pin (Q1) f = 2.14 GHz, VDS = 28 V
Input Power (Q2)
Pin (Q2) f = 2.14 GHz, VDS = 28 V
Channel Temperature
Tch
Storage Temperature
Tstg
Ratings
65
±7
0.25
1.0
40
0.3
1.5
150
65 to +150
Unit
V
V
A
A
W
W
W
°C
°C
2 Data Sheet PU10542EJ03V0DS

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डाउनलोड[ NE55410GR Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
NE55410GRN-CHANNEL SILICON POWER LDMOS FETCEL
CEL
NE55410GRN-CHANNEL SILICON POWER LDMOS FETRenesas
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