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NE5531079A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 7.5V OPERATION SILICON RF POWER LDMOS FET - Renesas

भाग संख्या NE5531079A
समारोह 7.5V OPERATION SILICON RF POWER LDMOS FET
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
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NE5531079A pdf
NE5531079A
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current (Pulse Test)
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V Note 1
DS
VGS
IDS
I Note 2
DS
Ptot
Tch
Tstg
Ratings
30
6.0
3.0
6.0
35
125
55 to +125
Unit
V
V
A
A
W
°C
°C
Note 1. VDS will be used under 12 V on RF operation.
2. Duty Cycle 50%, Ton 1 s
RECOMMENDED OPERATING CONDITIONS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
Test Conditions
VDS
VGS
IDS
Pin f = 460 MHz, VDS = 6.0 V
MIN.
1.15
TYP.
6.0
1.55
2.0
25
MAX.
7.5
2.05
30
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise specified, using our standard test fixture)
Parameter
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Symbol
Test Conditions
IGSS VGS = 6.0 V
IDSS VDS = 25 V
Vth
Rth
gm
BVDSS
Pout
IDS
ηadd
G Note
L
VDS = 7.5 V, IDS = 1.0 mA
Channel to Case
VDS = 7.5 V, IDS = 700±100 mA
IDSS = 10 μA
f = 460 MHz, VDS = 7.5 V,
Pin = 25 dBm,
IDset = 200 mA (RF OFF)
MIN.
0.8
2.5
25
39.0
TYP.
1.15
2.9
3.2
35
40.0
2.0
68
20.5
MAX.
100
10
Unit
nA
nA
1.55
4.0
V
°C/W
S
V
dBm
A
%
dB
Note Pin = 10 dBm
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2 Data Sheet PU10752EJ01V0DS

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