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SP07N65 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - SamHop Microelectronics

भाग संख्या SP07N65
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स SamHop Microelectronics 
लोगो SamHop Microelectronics लोगो 
पूर्व दर्शन
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<?=SP07N65?> डेटा पत्रक पीडीएफ

SP07N65 pdf
SP07N65
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS=0V , ID=250uA
VDS=520V , VGS=0V
VGS= ±30V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=0.5A
VDS=10V , ID=0.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=325V
ID=0.5A
VGS=10V
RGEN= 6 ohm
VDS=325V,ID=0.5A,VGS=10V
VDS=325V,ID=0.5A,
VGS=10V
650
2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Surface Mounted on FR4 Board of 1 inch2 , 1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
Typ
2.8
1.34
2.3
902
90
11
30
16.5
52
39
16.5
2.7
6
0.78
Max Units
1
±100
V
uA
nA
4V
1.68 ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
May,26,2014
2 www.samhop.com.tw

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डाउनलोड[ SP07N65 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
SP07N65N-Channel Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics


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