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SDU06N70 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - SamHop Microelectronics

भाग संख्या SDU06N70
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स SamHop Microelectronics 
लोगो SamHop Microelectronics लोगो 
पूर्व दर्शन
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<?=SDU06N70?> डेटा पत्रक पीडीएफ

SDU06N70 pdf
SDU/D06N70
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=560V , VGS=0V
VGS= ±30V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=3A
VDS=10V , ID=3A
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=350V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=350V,ID=1A,VGS=10V
VDS=350V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=60mH,VDD = 50V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Min Typ Max Units
700 V
1 uA
±100 nA
234V
1.30 1.45 ohm
9.6 S
1000
92
12
pF
pF
pF
32 ns
17 ns
51 ns
17 ns
15.5 nC
2.6 nC
6.1 nC
0.8 1.4
V
Oct,22,2014
2 www.samhop.com.tw

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डाउनलोड[ SDU06N70 Datasheet.PDF ]


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SDU06N70N-Channel Enhancement Mode Field Effect TransistorSamHop Microelectronics
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