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SDD04N65 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - SamHop Microelectronics

भाग संख्या SDD04N65
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स SamHop Microelectronics 
लोगो SamHop Microelectronics लोगो 
पूर्व दर्शन
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<?=SDD04N65?> डेटा पत्रक पीडीएफ

SDD04N65 pdf
SDU/D04N65
Ver 2.3
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=520V , VGS=0V
VGS= ±30V , VDS=0V
650 V
1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=2A
VDS=20V , ID=2A
2 3 4V
2.5 3.2 ohm
3.3 S
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
490 pF
54 pF
12 pF
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=325V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=325V,ID=1A,VGS=10V
VDS=325V,ID=1A,
VGS=10V
23 ns
17 ns
29 ns
12 ns
8.2 nC
1.7 nC
3.8 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure13)
e.Drain current limited by maximum junction temperature.
0.81 1.4
V
Jan,02,2014
2 www.samhop.com.tw

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डाउनलोड[ SDD04N65 Datasheet.PDF ]


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