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AO3418 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - KERSEMI

भाग संख्या AO3418
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स KERSEMI 
लोगो KERSEMI लोगो 
पूर्व दर्शन
1 Page
		
<?=AO3418?> डेटा पत्रक पीडीएफ

AO3418 pdf
Electrical Characteristics (TJ=25°C unless otherwise noted)
KSM3418,KSM3418L
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=3.8A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=3.5A
VGS=2.5V, ID=1A
Forward Transconductance
VDS=5V, ID=3.8A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=3.8A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=3.9,
tD(off)
Turn-Off DelayTime
RGEN=6
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=3.8A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/µs
Min
30
1
15
Typ
0.001
1.4
43
64
52
101
11.7
0.81
226
39
29
1.4
3
1.4
0.55
2.6
3.2
14.5
2.1
10.2
3.8
Max
1
5
100
1.8
60
85
70
155
1
2.5
270
1.7
3.6
4
5
22
3
13
5
Units
V
µA
nA
V
A
m
m
m
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2014-5-29
2 www.kersemi.com

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