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MMDT3946LP4 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS - Diodes

भाग संख्या MMDT3946LP4
समारोह COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS
मैन्युफैक्चरर्स Diodes 
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MMDT3946LP4 pdf
Electrical Characteristics, NPN 3904 Section @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
hFE
VCE(SAT)
VBE(SAT)
Cobo
fT
td
tr
ts
tf
Min
60
40
6.0
40
70
100
60
30
0.65
300
Max
50
50
300
0.20
0.30
0.85
0.95
4.0
35
35
200
50
Unit
V
V
V
nA
nA
V
V
pF
MHz
ns
ns
ns
ns
Test Condition
IC = 10μA, IE = 0
IC = 1.0mA, IB = 0
IE = 10μA, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VCE = 20V, IC = 20mA,
f = 100MHz
VCC = 3.0V, IC = 10mA,
VBE(off) = -0.5V, IB1 = 1.0mA
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
Electrical Characteristics, PNP 3906 Section @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
hFE
Min
-40
-40
-5.0
60
80
100
60
30
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VBE(SAT)
Cobo
-0.65
Current Gain-Bandwidth Product
fT 250
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
Notes: 5. Short duration test pulse used to minimize self-heating effect.
Max
-50
-50
300
-0.25
-0.40
-0.85
-0.95
4.5
35
35
225
75
Unit
V
V
V
nA
nA
V
V
pF
MHz
ns
ns
ns
ns
Test Condition
IC = -10μA, IE = 0
IC = -1.0mA, IB = 0
IE = -10μA, IC = 0
VCE = -30V, VEB(OFF) = -3.0V
VCE = -30V, VEB(OFF) = -3.0V
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
VCB = -5.0V, f = 1.0MHz, IE = 0
VCE = -20V, IC = -10mA,
f = 100MHz
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
DS30822 Rev. 4 - 2
2 of 5
www.diodes.com
MMDT3946LP
© Diodes Incorporated

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