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MMDT3906VC डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR - Diodes

भाग संख्या MMDT3906VC
समारोह DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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MMDT3906VC pdf
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICEX
IBL
hFE
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
VBE(SAT)
Cobo
Cibo
hie
hre
hfe
hoe
fT
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes: 5. Short duration test pulse used to minimize self-heating.
NF
td
tr
ts
tf
Min
-40
-40
-5.0
60
80
100
60
30
-0.65
2.0
0.1
100
3.0
250
Max
-50
-50
300
-0.25
-0.40
-0.85
-0.95
4.5
10
12
10
400
60
4.0
35
35
225
75
Unit Test Condition
V IC = -10µA, IE = 0
V IC = -1.0mA, IB = 0
V IE = -10µA, IC = 0
nA VCE = -30V, VEB(OFF) = -3.0V
nA VCE = -30V, VEB(OFF) = -3.0V
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
pF
pF
k
x 10-4
µS
MHz
dB
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
VCE = -5.0V, IC = -100µA,
RS = 1.0kΩ, f = 1.0kHz
ns VCC = -3.0V, IC = -10mA,
ns VBE(off) = 0.5V, IB1 = -1.0mA
ns VCC = -3.0V, IC = -10mA,
ns IB1 = IB2 = -1.0mA
DS30640 Rev. 3 - 2
2 of 4
www.diodes.com
MMDT3906VC

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