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BTB26 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 25A TRIACS - STMicroelectronics

भाग संख्या BTB26
समारोह 25A TRIACS
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=BTB26?> डेटा पत्रक पीडीएफ

BTB26 pdf
Characteristics
1 Characteristics
BTA24, BTB24, BTA25, BTA26, BTB26, T25
Table 2. Absolute maximum ratings
Symbol
Parameter
IT(RMS)
RMS on-state current (full sine wave)
TOP3
D2PAK /
TO-220AB
RD91 Ins/
TOP3 Ins.
TO-220AB Ins.
ITSM
I²t
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25° C)
I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
F = 50 Hz
F = 60 Hz
tp = 10 ms
F = 120 Hz
tp = 10 ms
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
tp = 20 µs
Storage junction temperature range
Operating junction temperature range
Tc = 105° C
Tc = 100° C
Tc = 100° C
Tc = 75° C
t = 20 ms
t = 16.7 ms
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 125° C
Value
25
250
260
340
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A²s
A/µs
V
A
W
°C
Table 3.
Electrical characteristics (Tj = 25° C, unless otherwise specified), Snubberless and
logic level (3 quadrants) T25, BTA/BTB24...W, BTA25...W, BTA26...W
Symbol
Test Conditions
Quadrant
T25
T2535
BTA/BTB
CW BW
Unit
IGT(1)
VGT
VGD
IH(2)
VD = 12 V RL = 33 Ω
VD = VDRM RL = 3.3 kΩ
Tj = 125° C
IT = 500 mA
IL IG = 1.2 IGT
dV/dt (2) VD = 67 %VDRM gate open
(dI/dt)c (2) Without snubber
1. minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1.
I - II - III
I - II - III
MAX.
MAX.
35
I - II - III MIN.
I - III
II
Tj = 125° C
Tj = 125° C
MAX.
MAX.
MIN.
MIN.
50
70
80
500
13
35 50 mA
1.3 V
0.2 V
50 75 mA
70 80
mA
80 100
500 1000 V/µs
13 22 A/ms
2/12

विन्यास 12 पेज
डाउनलोड[ BTB26 Datasheet.PDF ]


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