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C2M0025120D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Power MOSFET - Cree

भाग संख्या C2M0025120D
समारोह Silicon Carbide Power MOSFET
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
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C2M0025120D pdf
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
V(BR)DSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
1200
2.0
2.6
2.1
4
IDSS
IGSS
RDS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
gfs Transconductance
2 100
600
25 34
43
23.6
21.7
Ciss Input Capacitance
2788
Coss Output Capacitance
220
Crss Reverse Transfer Capacitance
15
Eoss Coss Stored Energy
121
EAS Avalanche Energy, Single Pluse
3.5
EON Turn-On Switching Energy
1.4
EOFF Turn Off Switching Energy
0.3
td(on) Turn-On Delay Time
14
tr Rise Time
32
td(off)
Turn-Off Delay Time
29
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
28
1.1
46
50
161
Unit
V
V
V
μA
nA
mΩ
S
Test Conditions
VGS = 0 V, ID = 100 μA
VDS = VGS, ID = 15mA
VDS = VGS, ID = 15mA, TJ = 150 °C
VDS = 1200 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = 20 V, ID = 50 A
VGS = 20 V, ID = 50 A, TJ = 150 °C
VDS= 20 V, IDS= 50 A
VDS= 20 V, IDS= 50 A, TJ = 150 °C
VGS = 0 V
pF VDS = 1000 V
f = 1 MHz
μJ VAC = 25 mV
J ID = 50A, VDD = 50V
mJ VDS = 800 V, VGS = -5/20 V,
ID = 50A, RG(ext) = 2.5Ω,L= 412 μH
VDD = 800 V, VGS = -5/20 V
ID = 50 A,
ns RG(ext) = 2.5 Ω, RL = 16 Ω
Timing relative to VDS
Per IEC60747-8-4 pg 83
Ω f = 1 MHz, VAC = 25 mV, ESR of CISS
VDS = 800 V, VGS = -5/20 V
nC ID = 50 A
Per IEC60747-8-4 pg 83
Reverse Diode Characteristics
Symbol Parameter
Typ. Max.
VSD Diode Forward Voltage
3.3
3.1
IS Continuous Diode Forward Current
90
trr Reverse Recovery Time
45
Qrr Reverse Recovery Charge
406
Irrm Peak Reverse Recovery Current
13.5
Note (1): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Unit Test Conditions
V VGS = - 5 V, ISD = 25 A
V VGS = - 5 V, ISD = 25 A, TJ = 150 °C
TC= 25 °C
ns VGS = - 5 V, ISD = 50 A ,TJ = 25 °C
nC VR = 800 V
dif/dt = 1000 A/µs
A
Symbol
RθJC
RθJC
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
Typ.
0.24
Max.
0.27
40
Unit
°C/W
Test Conditions
Note
Fig. 11
Fig.
4,5,6
Fig. 7
Fig.
17,18
Fig 16
Fig. 29
Fig. 25
Fig. 27
Fig. 12
Note
Fig. 8, 9,
10
Note 1
Note 1
Note
Fig. 21
2 C2M0025120D Rev. B, 10-2015

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