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C2M0040120D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Power MOSFET - Cree

भाग संख्या C2M0040120D
समारोह Silicon Carbide Power MOSFET
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
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C2M0040120D pdf
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min. Typ.
V(BR)DSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
1200
2.0
2.6
2.1
IDSS
IGSS
RDS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
gfs Transconductance
1
40
84
15.1
13.2
Ciss Input Capacitance
1893
Max.
4
100
250
52
Coss Output Capacitance
150
Crss Reverse Transfer Capacitance
10
Eoss Coss Stored Energy
82
EAS Avalanche Energy, Single Pluse
2
EON Turn-On Switching Energy
1.0
EOFF Turn Off Switching Energy
0.4
td(on) Turn-On Delay Time
15
tr Rise Time
52
td(off)
Turn-Off Delay Time
26
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
34
1.8
28
37
115
Unit
V
V
V
μA
nA
mΩ
S
Test Conditions
VGS = 0 V, ID = 100 μA
VDS = VGS , ID = 10mA
VDS = VGS , ID = 10mA,TJ = 150 °C
VDS = 1200 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = 20 V, ID = 40 A
VGS = 20 V, ID = 40 A, TJ = 150 °C
VDS= 20 V, IDS= 40 A
VDS= 20 V, IDS= 40 A, TJ = 150 °C
VGS = 0 V
pF VDS = 1000 V
f = 1 MHz
μJ VAC = 25 mV
J ID = 40A, VDD = 50V
mJ VDS = 800 V, VGS = -5/20 V
ID = 40A, RG(ext) = 2.5Ω, L= 80 μH
VDD = 800 V, VGS = -5/20 V
ID = 40 A
ns RG(ext) = 2.5 Ω, RL = 20 Ω
Timing relative to VDS
Per IEC60747-8-4 pg 83
Ω f = 1 MHz, VAC = 25 mV
VDS = 800 V, VGS = -5/20 V
nC ID = 40 A
Per IEC60747-8-4 pg 21
Reverse Diode Characteristics
Symbol Parameter
Typ. Max.
VSD Diode Forward Voltage
3.3
3.1
IS Continuous Diode Forward Current
60
trr Reverse Recovery Time
54
Qrr Reverse Recovery Charge
283
Irrm Peak Reverse Recovery Current
15
Note (1): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Unit
V
V
A
ns
nC
A
Test Conditions
VGS = - 5 V, ISD = 20 A, TJ = 25 °C
VGS = - 5 V, ISD = 20 A, TJ = 150 °C
TC= 25 °C
VGS = - 5 V, ISD = 40 A TJ = 25 °C
VR = 800 V
dif/dt = 1000 A/µs
Symbol
RθJC
RθJC
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
Typ.
0.34
Max.
0.38
40
Unit
°C/W
Test Conditions
Note
Fig. 11
Fig. 4,5,6
Fig. 7
Fig. 17,18
Fig 16
Fig. 29
Fig. 25
Fig. 27
Fig. 12
Note
Fig. 8, 9,
10
Note 1
Note 1
Note
Fig. 21
2 C2M0040120D Rev. B, 10-2015

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