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ACE3401D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode Field Effect Transistor - ACE Technology

भाग संख्या ACE3401D
समारोह P-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स ACE Technology 
लोगो ACE Technology लोगो 
पूर्व दर्शन
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<?=ACE3401D?> डेटा पत्रक पीडीएफ

ACE3401D pdf
ACE3401D
P-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Off characteristics
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
IDSS
IGSSF
IGSSR
VDS=-30V, VGS=0V
VGS=-20V
VGS=20V
-1
-100
100
uA
nA
nA
On characteristics
Static Drain-Source On-Resistance
Gate Threshold Voltage
VGS=-10V, ID=-4.2A
RDS(ON)
VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
VGS(th) VDS=VGS, ID=-250uA
Switching characteristics(3)
-0.7
-1.0
63
75
120
-1.3 V
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Td(on)
tf
td(off)
VDD=-15V,RL=3.6Ω
VGS=-10V, RGEN=6Ω
tf
Dynamic characteristics(3)
6.5
3.5
40
13
ns
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS=-30V, VGS=0V
f=200KHz
Drain-source diode characteristics and maximum ratings
600
85
566
pF
Body Diode Forward Voltage VSD VSD=0V, IS=-1A
-0.78 -1
V
Note:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board
design.
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%
VER 1.2 2

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डाउनलोड[ ACE3401D Datasheet.PDF ]


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