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ACE2607B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode Field Effect Transistor - ACE Technology

भाग संख्या ACE2607B
समारोह P-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स ACE Technology 
लोगो ACE Technology लोगो 
पूर्व दर्शन
1 Page
		
<?=ACE2607B?> डेटा पत्रक पीडीएफ

ACE2607B pdf
ACE2607B
P-Channel Enhancement Mode Field Effect Transistor
Ordering information
ACE2607B XX + H
Halogen - free
Pb - free
GM : SOT-23-6L
Electrical Characteristics
TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
On/Off characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA -30 -34
V
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS VDS=-24V, VGS=0V
IGSS VGS=±20V, VDS=0V
On characteristics b
-3
±1.5
-200
±50
nA
nA
Static Drain-Source On-Resistance
Gate Threshold Voltage
RDS(ON)
VGS(th)
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-4A
VDS=VGS, ID=-250uA
-1
52
68
-1.3
65 mΩ
85
-3 V
Forward Transconductance
gFS VDS=-5V, ID=-6A
12
S
Switching characteristics b
Turn-On Delay Time
Turn-Off Delay Time
Td(on)
Td(off)
VDD=-15V, RL=2.5Ω,
VGS=-10V, RGEN=3Ω
8.6
28.2
ns
Dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS=-15V, VGS=0V
f=1.0MHz
550
60
50
Drain-source diode characteristics and maximum ratings b
pF
Drain-Source Diode Forward
Voltage
VSD VGS=0V, IS=-1A (2)
-0.81
V
Note: 1. The value of PD is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment
with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is
based on the DC thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
VER 1.3 2

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