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ACE2600B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N-Channel Enhancement Mode Field Effect Transistor - ACE Technology

भाग संख्या ACE2600B
समारोह Dual N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स ACE Technology 
लोगो ACE Technology लोगो 
पूर्व दर्शन
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<?=ACE2600B?> डेटा पत्रक पीडीएफ

ACE2600B pdf
ACE2600B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Ordering information
ACE2600B XX + H
Halogen - free
Pb - free
GM : SOT-23-6L
Electrical Characteristics TA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
V(BR)DSS
IDSS
IGSS
RDS(ON)
VGS(th)
gFS
VSD
IS
VGS=0V, ID=250uA
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VGS=4.5V, ID=6.5A
VGS=2.5V, ID=5.5A
VGS=1.8V, ID=5A
VDS=VGS, IDS=250uA
VDS=5V, ID=6.5A
ISD=2.5A, VGS=0V
20
0.4
18.3
21.7
27.3
0.56
13
0.81
V
1 uA
10 uA
22
26 mΩ
34
1V
S
1V
2.5 A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=10V, ID=8A
VGS=4.5V
Qgd
13.8
4.1
5.6
17.94
5.33
7.28
nC
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Td(on)
tf
td(off)
tf
VDS=10V, VGS=5V
RGEN=3Ω, RL=1.5Ω
Dynamic
6.2 12.4
12.7
51.7
25.4
103.4
ns
16 32
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS=10V, VGS=0V
f=1MHz
1160
104
29
pF
Note:
A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B. Repetitive rating, pulse width limited by junction temperature.
C. The current rating is based on the t10s junction to ambient thermal resistance rating.
VER 1.2 2

विन्यास 6 पेज
डाउनलोड[ ACE2600B Datasheet.PDF ]


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