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DMC25D0UVT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMC25D0UVT
समारोह COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
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DMC25D0UVT pdf
DMC25D0UVT
Maximum Ratings Q1 (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
Maximum Ratings Q2 (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -10V
Continuous Drain Current (Note 5) VGS = -4.5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
Steady State
Note 9
Symbol
VDSS
VGSS
ID
IS
IDM
Symbol
VDSS
VGSS
ID
IS
IDM
Value
25
-0.5
+8
0.4
1.2
1.5
Value
-30
±12
-3.2
-14.4
-2.6
-1.2
-20
Unit
V
V
A
A
A
Unit
V
V
A
A
A
A
A
Thermal Characteristics
Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
Note 9
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.2
101
5
37
-55 to +150
Unit
W
°C/W
°C/W
°C
Electrical Characteristics Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
Min
25
0.65
Typ
0.85
3.8
0.76
26.2
7.1
2.7
84.5
0.4
0.7
0.1
0.1
3
2.3
7.7
3.7
Max
1
100
1.5
4
1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
9. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 20V, VGS = 0V
nA VGS = 8V, VDS = 0V
V VDS = VGS, ID = 250μA
Ω VGS = 4.5V, ID = 0.4A
V VGS = 0V, IS = 0.29A
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VDS = 5V, ID = 0.2A
ns
VGS = 4.5V, VDS = 6V,
RG = 50Ω, ID = 0.5A
DMC25D0UVT
Document number: DS37508 Rev. 3 - 2
2 of 11
www.diodes.com
April 2015
© Diodes Incorporated

विन्यास 11 पेज
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