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DMC1030UFDB डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMC1030UFDB
समारोह COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMC1030UFDB pdf
DMC1030UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t < 5s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
Q1
N-CHANNEL
12
±8
5.1
4.1
6.6
5.3
2
35
Q2
P-CHANNEL
-12
±8
-3.9
-3.1
-5.0
-4.0
-1.7
-25
Units
V
V
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t < 5s
Steady State
t < 5s
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.36
1.89
92
66
18
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics Q1 N-CHANNEL (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min
BVDSS
IDSS
IGSS
12
VGS(th)
RDS(ON)
VSD
0.4
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Typ
17
20
24
28
0.7
1003
132
115
11.3
12.2
23.1
1.3
1.5
4.4
7.4
18.8
4.9
7.6
0.9
Max
1.0
±10
1
34
40
50
70
1.2
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 12V, VGS = 0V
μA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 4.6A
mVGS = 2.5V, ID = 4.2A
VGS = 1.8V, ID = 3.8A
VGS = 1.5V, ID = 1.5A
V VGS = 0V, IS = 4.8A
pF
pF
VDS = 6V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC VDS = 10V, ID = 6.8A
nC
ns
ns VDD = 6V, VGS = 4.5V,
ns RL = 1.1, RG = 1
ns
nS IS = 5.4A, dI/dt = 100A/μs
nC IS = 5.4A, dI/dt = 100A/μs
Notes:
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
2 of 9
www.diodes.com
April 2014
© Diodes Incorporated

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