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DMC1017UPD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMC1017UPD
समारोह COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMC1017UPD pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
t<10s
Maximum Body Diode Forward Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
DMC1017UPD
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
Q1 Value
12
±8
9.5
7.6
13.0
10.4
2
50
9.7
4.7
Q2 Value
-12
±8
-6.9
-5.5
-9.4
-7.5
-2
-35
-9.2
4.3
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = +25°C
TA = +70°C
Steady state
t<10s
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
2.3
1.5
54
29
4.1
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics Q1 N-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Min
12

0.6


Typ

9.6
11
0.7
1787
297
265
1.6
18.6
35.4
2.7
3.8
6.9
10.9
70.3
31.8
13.1
2.2
Max
1
100
1.5
17
25
1.2


Unit
Test Condition
V VGS = 0V, ID = 250µA
µA VDS = 12V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 250µA
mΩ VGS = 4.5V, ID = 11.8A
VGS = 2.5V, ID = 9.8A
V VGS = 0V, IS = 2.9A
pF VDS = 6V, VGS = 0V,
f = 1.0MHz
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDS = 6V, ID = 11.8A
nS
VDD = 6V, RL = 6Ω
VGS = 4.5V, RG = 6Ω, ID = 1A
nS IF = 11.8A, di/dt = 100A/μs
nC IF = 11.8A, di/dt = 100A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMC1017UPD
Document number: DS36903 Rev. 1 - 2
2 of 9
www.diodes.com
September 2015
© Diodes Incorporated

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