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SM3316NSQG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Sinopower

भाग संख्या SM3316NSQG
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Sinopower 
लोगो Sinopower लोगो 
पूर्व दर्शन
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<?=SM3316NSQG?> डेटा पत्रक पीडीएफ

SM3316NSQG pdf
SM3316NSQG
®
Absolute
Maximum
Ratings
(T
A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID a
IDM a
ID c
IDM c
IS a
IAS b
EAS b
TJ
TST G
PD a
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (VGS=10V)
Pulsed Drain Current (VGS=10V)
Continuous Drain Current (VGS=10V)
Pulsed Drain Current (VGS=10V)
Diode Continuous Forward Current
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
PD c Maximum Power Dissipation
TA=25°C
TA=70°C
TA=25°C
TC =25°C
TC =70°C
TC =25°C
L=0.1mH
L=0.1mH
TA=25°C
TA=70°C
TC =25°C
TC =70°C
30
±20
10
8
40
25
17
50
1
17
14
150
-55 to 150
2.5
1.6
22
10
V
A
mJ
°C
W
RθJA a Thermal Resistance-Junction to Ambient
t 10s
Steady State
50
70 °C/W
RθJC c Thermal Resistance-Junction to Case
Steady State
5.5
Note aSurface Mounted on 1in2 pad area, t 10sec.
Note bUIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note cThe power dissipation PD is based on TJ(MAX) = 150oC, and it is useful for reducing junction-to-case thermal
resistance (RθJC) when additional heat sink is used.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.7 - July, 2015
2
www.sinopowersemi.com

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