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UPA2592T1H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N- AND P-CHANNEL MOSFET - Renesas

भाग संख्या UPA2592T1H
समारोह N- AND P-CHANNEL MOSFET
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
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UPA2592T1H pdf
μ PA2592T1H
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (1 unit, 5 s) Note2
Total Power Dissipation (2 units, 5 s) Note2
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
20
±12
±4.0
±16
1.5
1.24
150
55 to +150
20
m12
m3.0
m12
Notes 1. PW 10 μs, Duty Cycle 1%
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mm
UNIT
V
V
A
A
W
W
°C
°C
EQUIVALENT CIRCUIT
N-channel
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
P-channel
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
2 Data Sheet G20215EJ1V0DS

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