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UPA2201T1M डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL MOS FIELD EFFECT TRANSISTOR - Renesas

भाग संख्या UPA2201T1M
समारोह N-CHANNEL MOS FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
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UPA2201T1M pdf
μ PA2201T1M
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
Zero Gate Voltage Drain Current
IDSS
Gate Leakage Current
IGSS
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
VDS = 20 V, VGS = 0 V
VGS = ±12 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 4.5 A
VGS = 4.5 V, ID = 9 A
VGS = 2.5 V, ID = 4.5 A
VDS = 10 V,
VGS = 0 V,
f = 1 MHz
VDD = 10 V, ID = 4.5 A,
VGS = 4 V,
RG = 10 Ω
VDD = 16 V,
VGS = 4.5 V,
ID = 9 A
IF = 9 A, VGS = 0 V
IF = 9 A, VGS = 0 V,
di/dt = 100 A/μs
0.5
4
Note Pulsed
TYP.
16
21
920
220
170
11.7
22.3
38.8
18.2
13.3
2.0
5.4
0.87
28
19
MAX.
1
±10
1.5
18.5
27
1.2
UNIT
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VGS 90%
ID 90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet G19447EJ1V0DS

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डाउनलोड[ UPA2201T1M Datasheet.PDF ]


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