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UPA1855 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL MOS FIELD EFFECT TRANSISTOR - Renesas

भाग संख्या UPA1855
समारोह N-CHANNEL MOS FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स Renesas 
लोगो Renesas लोगो 
पूर्व दर्शन
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<?=UPA1855?> डेटा पत्रक पीडीएफ

UPA1855 pdf
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain Cut-off Current
IDSS VDS = 20 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±12 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 3.0 A
Drain to Source On-state Resistance
RDS(on)1 VGS = 4.5 V, ID = 3.0 A
RDS(on)2 VGS = 4.0 V, ID = 3.0 A
RDS(on)3 VGS = 2.5 V, ID = 3.0 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 10 V
Rise Time
tr ID = 3.0 A
Turn-off Delay Time
td(off)
VGS(on) = 4.0 V
Fall Time
tf RG = 10
Total Gate Charge
QG VDD = 10 V
Gate to Source Charge
QGS ID = 6.0 A
Gate to Drain Charge
QGD
VGS = 4.0 V
Diode Forward Voltage
VF(S-D) IF = 6.0 A, VGS = 0 V
Reverse Recovery Time
trr IF = 6.0 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 15 A / µs
µ PA1855
MIN. TYP. MAX. UNIT
10 µA
±10 µA
0.5 1.0 1.5 V
1 13.3
S
17 23 m
18 24 m
22 29 m
980 pF
293 pF
205 pF
86 ns
247 ns
480 ns
659 ns
8.8 nC
2.2 nC
3.2 nC
0.82 V
44 ns
2.2 nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG. RG = 10
VGS
0
τ
τ = 1µ s
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
010 %
VGS(on)
ID 90 %
ID
Wave Form
0 10 %
td(on)
ID
tr td(off)
90 %
90 %
10 %
tf
ton toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D13454EJ2V0DS

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डाउनलोड[ UPA1855 Datasheet.PDF ]


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