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IRF8252TRPBF-1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF8252TRPBF-1
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF8252TRPBF-1 pdf
IRF8252TRPbF-1
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Rg
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
89
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.018
2.0
2.9
1.80
-6.67
–––
–––
–––
–––
–––
35
10
4.6
12
8.9
16
26
0.61
23
32
19
12
5305
1340
725
Max. Units
Conditions
–––
–––
2.7
3.7
2.35
–––
1.0
150
100
-100
–––
53
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
eemΩ
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 20A
V VDS = VGS, ID = 100μA
mV/°C VDS = VGS, ID = 100μA
μA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
S VDS = 13V, ID = 20A
––– VDS = 13V
–––
–––
nC
VGS = 4.5V
ID = 20A
––– See Figs. 15 & 16
–––
–––
1.22
nC VDS = 16V, VGS = 0V
Ω
––– VDD = 13V, VGS = 4.5V
–––
–––
ns
ID = 20A
RG = 1.8Ω
––– See Fig. 18
––– VGS = 0V
––– pF VDS = 13V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
231
20
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
––– –––
3.1
––– ––– 200
––– ––– 1.0
MOSFET symbol
A
showing the
D
integral reverse
G
A
p-n junction diode.
S
eV TJ = 25°C, IS = 20A, VGS = 0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
e––– 19 29 ns TJ = 25°C, IF = 20A, VDD = 13V
––– 12 18 nC di/dt = 230A/μs
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014

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