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IRF8113PBF-1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF8113PBF-1
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF8113PBF-1 pdf
IRF8113PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250μA
ΔΒVDSS/ΔTJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
––– 0.024 –––
––– 4.7 5.6
––– 5.8 6.8
V/°C Reference to 25°C, ID = 1mA
emΩ VGS = 10V, ID = 17.2A
eVGS = 4.5V, ID = 13.8A
VGS(th)
Gate Threshold Voltage
1.5 ––– 2.2
V VDS = VGS, ID = 250μA
ΔVGS(th)
Gate Threshold Voltage Coefficient
––– - 5.4 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 μA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
73 ––– ––– S VDS = 15V, ID = 13.3A
Qg Total Gate Charge
––– 24 36
Qgs1 Pre-Vth Gate-to-Source Charge ––– 6.2 ––– VDS = 15V
Qgs2
Post-Vth Gate-to-Source Charge
––– 2.0 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge
––– 8.5 –––
ID = 13.3A
Qgodr
Gate Charge Overdrive
––– 7.3 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 10.5 –––
Qoss
RG
td(on)
Output Charge
Gate Resistance
Turn-On Delay Time
––– 10 ––– nC VDS = 10V, VGS = 0V
––– 0.8 1.5 Ω
––– 13 –––
eVDD = 15V, VGS = 4.5V
tr Rise Time
––– 8.9 –––
ID = 13.3A
td(off)
Turn-Off Delay Time
––– 17 ––– ns Clamped Inductive Load
tf Fall Time
––– 3.5 –––
Ciss Input Capacitance
––– 2910 –––
VGS = 0V
Coss Output Capacitance
––– 600 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 250 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Typ.
–––
–––
Max.
48
13.3
Units
mJ
A
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 3.1
MOSFET symbol
A showing the
––– ––– 135
integral reverse
––– ––– 1.0
––– 34 51
––– 21 32
p-n junction diode.
eV TJ = 25°C, IS = 13.3A, VGS = 0V
ns TJ = 25°C, IF = 13.3A, VDD = 10V
enC di/dt = 100A/μs
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
June 23, 2014

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International Rectifier


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