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IRF7910PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7910PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF7910PBF?> डेटा पत्रक पीडीएफ

IRF7910PBF pdf
IRF7910PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
12
–––
–––
–––
0.6
–––
–––
–––
–––
Typ.
–––
0.01
11.5
20
–––
–––
–––
–––
–––
Max.
–––
–––
15
50
2.0
100
250
200
-200
Units
V
V/°C
m
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 8.0A ƒ
VGS = 2.8V, ID = 5.0A
VDS = VGS, ID = 250µA
VDS = 9.6V, VGS = 0V
VDS = 9.6V, VGS = 0V, TJ = 125°C
VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
18 ––– –––
––– 17 26
––– 4.4 –––
––– 5.2 –––
––– 16 –––
––– 9.4 –––
––– 22 –––
––– 16 –––
––– 6.3 –––
––– 1730 –––
––– 1340 –––
––– 330 –––
S VDS = 6.0V, ID = 8.0A
ID = 8.0A
nC VDS = 6.0V
VGS = 4.5V
VGS = 0V, VDS = 10V
VDD = 6.0V
ns ID = 8.0A
RG = 1.8
VGS = 4.5V ƒ
VGS = 0V
VDS = 6.0V
pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
–––
–––
Max.
100
8.0
Units
mJ
A
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.85
0.70
50
60
51
60
Max.
1.8
79
1.3
–––
75
90
77
90
Units
A
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 8.0A, VGS = 0V ƒ
TJ = 125°C, IS = 8.0A, VGS = 0V ƒ
TJ = 25°C, IF = 8.0A, VR =12V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 8.0A, VR =12V
di/dt = 100A/µs ƒ
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