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IRF7907TRPBF-1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7907TRPBF-1
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF7907TRPBF-1 pdf
IRF7907TRPbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
ΔΒVDSS/ΔTJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
ΔVGS(th)/ΔTJ
IDSS
IGSS
gfs
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Q1&Q2
Q1
Q2
Q1
Q2
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
30
–––
–––
–––
–––
–––
–––
1.35
–––
–––
–––
–––
–––
–––
19
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.024
0.024
13.7
17.1
9.8
11.5
1.8
-4.6
-4.9
–––
–––
–––
–––
–––
–––
6.7
14
1.3
3.0
0.7
1.3
2.5
4.9
2.2
4.8
3.2
6.2
4.5
9.0
2.6
3.0
6.0
8.0
9.3
14
8.0
13
3.4
5.3
850
1790
190
390
88
190
Max.
–––
–––
–––
16.4
20.5
11.8
13.7
2.35
–––
–––
1.0
150
100
-100
–––
–––
10
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.7
5.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
eVGS = 10V, ID = 9.1A
emΩ VGS = 4.5V, ID = 7.3A
eVGS = 10V, ID = 11A
eVGS = 4.5V, ID = 8.8A
V Q1: VDS = VGS, ID = 25μA
mV/°C Q2: VDS = VGS, ID = 50μA
μA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 7.0A
VDS = 15V, ID = 8.8A
Q1
VDS = 15V
nC VGS = 4.5V, ID = 7.0A
Q2
VDS = 15V
VGS = 4.5V, ID = 8.8A
nC VDS = 16V, VGS = 0V
Ω
Q1
VDD = 15V, VGS = 4.5V
ID = 7.0A
ns
Q2
VDD = 15V, VGS = 4.5V
ID = 8.8A
Clamped Inductive Load
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Typ.
–––
–––
Q1 Max.
10
7.0
Q2 Max.
15
8.8
Units
mJ
A
Min. Typ. Max. Units
Conditions
Q1 ––– ––– 2.8 A MOSFET symbol
Q2 ––– ––– 2.8
showing the
Q1 ––– ––– 76
A integral reverse
Q2 ––– ––– 85
p-n junction diode.
eQ1 ––– ––– 1.0 V TJ = 25°C, IS = 7.3A, VGS = 0V
eQ2 ––– ––– 1.0
TJ = 25°C, IS = 8.8A, VGS = 0V
eQ1 ––– 12 18 ns Q1 TJ = 25°C, IF = 7.0A,
Q2 ––– 16 24
VDD = 15V, di/dt = 100A/μs
eQ1 ––– 4.1 6.1 nC Q2 TJ = 25°C, IF = 8.8A,
Q2 ––– 5.9 8.9
VDD = 15V, di/dt = 100A/μs
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October 16, 2014

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