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IRF7832PBF-1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7832PBF-1
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF7832PBF-1 pdf
IRF7832PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30
–––
–––
–––
1.39
–––
–––
0.023
3.1
3.7
–––
5.7
–––
–––
4.0
4.8
2.32
–––
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
emΩ VGS = 10V, ID = 20A
eVGS = 4.5V, ID = 16A
V VDS = VGS, ID = 250μA
mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 μA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
77 ––– –––
––– 34 51
S VDS = 15V, ID = 16A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 8.6 –––
––– 2.9 –––
––– 12 –––
––– 10.5 –––
VDS = 15V
nC VGS = 4.5V
ID = 16A
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 14.9 –––
Qoss
Output Charge
Rg Gate Resistance
––– 23 ––– nC VDS = 16V, VGS = 0V
––– 1.2 2.4 Ω
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 12 –––
VDD = 15V, VGS = 4.5V
––– 6.7 –––
ID = 16A
––– 21 ––– ns Clamped Inductive Load
tf Fall Time
––– 13 –––
Ciss Input Capacitance
––– 4310 –––
VGS = 0V
Coss Output Capacitance
––– 990 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 450 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
260
16
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 3.1
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 160
A showing the
integral reverse
G
––– ––– 1.0
p-n junction diode.
S
eV TJ = 25°C, IS = 16A, VGS = 0V
e––– 41 62 ns TJ = 25°C, IF = 16A, VDD = 10V
––– 39 59 nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 22, 2013

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