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IRF7831PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7831PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF7831PBF?> डेटा पत्रक पीडीएफ

IRF7831PBF pdf
IRF7831PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
––– 0.025 –––
2.5 3.1 3.6
3.0 3.7 4.4
V/°C Reference to 25°C, ID = 1mA
emVGS = 10V, ID = 20A
eVGS = 4.5V, ID = 16A
VGS(th)
Gate Threshold Voltage
1.35 ––– 2.35 V VDS = VGS, ID = 250µA
VGS(th)
Gate Threshold Voltage Coefficient
––– - 5.7 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 12V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -12V
gfs Forward Transconductance
97 ––– ––– S VDS = 15V, ID = 16A
Qg Total Gate Charge
––– 40 60
Qgs1
Qgs2
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
––– 12 –––
VDS = 15V
––– 3.1 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge
––– 11 –––
ID = 16A
Qgodr
Gate Charge Overdrive
––– 14 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 14 –––
Qoss
RG
td(on)
Output Charge
Gate Resistance
Turn-On Delay Time
––– 22 ––– nC VDS = 16V, VGS = 0V
––– 1.4 2.5
––– 18 –––
eVDD = 15V, VGS = 4.5V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 10 –––
ID = 16A
––– 17 ––– ns Clamped Inductive Load
tf Fall Time
––– 5.3 –––
Ciss Input Capacitance
––– 6240 –––
VGS = 0V
Coss Output Capacitance
––– 980 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 390 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
2
Typ.
–––
–––
Max.
100
16
Units
mJ
A
Min. Typ. Max. Units
Conditions
––– ––– 2.5
MOSFET symbol
A showing the
––– ––– 170
integral reverse
––– ––– 1.2
p-n junction diode.
eV TJ = 25°C, IS = 16A, VGS = 0V
––– 42 62 ns TJ = 25°C, IF = 16A, VDD = 25V
e––– 31 47 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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