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IRF7821PBF-1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7821PBF-1
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF7821PBF-1 pdf
IRF7821PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒVDSS/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
30 ––– ––– V VGS = 0V, ID = 250μA
––– 0.025 ––– V/°C Reference to 25°C, ID = 1mA
e––– 7.0 9.1 mΩ VGS = 10V, ID = 13A
––– 9.5 12.5
eVGS = 4.5V, ID = 10A
1.0 ––– ––– V VDS = VGS, ID = 250μA
––– - 4.9 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 μA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
22 ––– –––
––– 9.3 14
S VDS = 15V, ID = 10A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 2.5 –––
VDS = 15V
––– 0.8 ––– nC VGS = 4.5V
––– 2.9 –––
ID = 10A
––– 3.1 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 3.7 –––
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 6.1 ––– nC VDS = 10V, VGS = 0V
––– 6.3 –––
eVDD = 15V, VGS = 4.5V
––– 2.7 –––
ID = 10A
––– 9.7 ––– ns Clamped Inductive Load
tf Fall Time
––– 7.3 –––
Ciss Input Capacitance
––– 1010 –––
VGS = 0V
Coss Output Capacitance
––– 360 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 110 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dhEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
44
10
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 3.1
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ùh(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
––– ––– 100
––– –––
––– 28
––– 23
1.0
42
35
A showing the
integral reverse
p-n junction diode.
eV TJ = 25°C, IS = 10A, VGS = 0V
ens TJ = 25°C, IF = 10A, VDD = 20V
nC di/dt = 100A/μs
2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 22, 2013

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International Rectifier


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