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IRF7809AVPBF-1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7809AVPBF-1
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRF7809AVPBF-1?> डेटा पत्रक पीडीएफ

IRF7809AVPBF-1 pdf
IRF7809AVPbF-1
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BVDSS
Static Drain-Source
on Resistance
Gate Threshold Voltage
Drain-Source Leakage
CCuurrrreennt t*
RDS(on)
VGS(th)
IDSS
Min Typ
30 –
7.0
1.0
Max Units
–V
9.0 mΩ
V
30
150 μA
Gate-Source Leakage
Current*
IGSS
±100 nA
Total Gate Chg Cont FET
Total Gate Chg Sync FET
Pre-Vth
Gate-Source Charge
QG
QG
QGS1
41 62
36 54
7.0
Post-Vth
Gate-Source Charge
QGS2
2.3
nC
Gate to Drain Charge
QGD
Switch Chg(Qgs2 + Qgd)
Qsw
Output Charge*
Qoss
Gate Resistance
RG
Turn-on Delay Time
td (on)
Rise Time
tr
Turn-off Delay Time
td (off)
Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
12
14
30
1.5
14
36
96
10
– 3780
– 1060
Crss
Source-Drain Rating & Characteristics
21
45
3.0
130
Ω
ns
pF
Parameter
Min Typ Max Units
Diode Forward
Voltage*
VSD
1.3 V
Reverse Recovery
Charge„
Qrr
120 nC
Reverse Recovery
Charge (with Parallel
Schottky)„
Qrr(s)
150 nC
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width 400 μs; duty cycle 2%.
ƒ When mounted on 1 inch square copper board, t < 10 sec.
„
…
TTyyppic=aml veaaluseusredm-eQasosusred at VGS = 4.5V, IF = 15A.
Conditions
VGS = 0V, ID = 250μA
VGS = 4.5V, ID = 15A‚
VDS = VGS,ID = 250μA
VDS = 24V, VGS = 0
VDS = 24V, VGS = 0,
Tj = 100°C
VGS = ±12V
VGS=5V, ID=15A, VDS=20V
VGS = 5V, VDS< 100mV
VDS = 20V, ID = 15A
ID=15A, VDS=16V
VDS = 16V, VGS = 0
VDD = 16V, ID = 15A
VGS = 5V
Clamped Inductive Load
VDS = 16V, VGS = 0
Conditions
IS = 15A‚, VGS = 0V
di/dt ~ 700A/μs
VDS = 16V, VGS = 0V, IS = 15A
di/dt = 700A/μs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
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June 23, 2014

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IRF7809AVPBF-1Power MOSFETInternational Rectifier
International Rectifier


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