DataSheet.in

IRF7807ZPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7807ZPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRF7807ZPBF?> डेटा पत्रक पीडीएफ

IRF7807ZPBF pdf
IRF7807ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.023
11
14.5
1.8
- 4.7
–––
–––
–––
–––
–––
7.2
2.1
0.7
2.7
1.7
3.4
2.8
2.5
6.9
6.2
10
3.1
770
190
100
––– V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
e13.8 mVGS = 10V, ID = 11A
e18.2
VGS = 4.5V, ID = 8.8A
2.25 V VDS = VGS, ID = 250µA
––– mV/°C
1.0
150
100
-100
–––
11
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 8.8A
––– VDS = 15V
––– nC VGS = 4.5V
––– ID = 8.8A
––– See Fig. 16
–––
––– nC VDS = 15V, VGS = 0V
4.8
e––– VDD = 15V, VGS = 4.5V
––– ID = 8.8A
––– ns Clamped Inductive Load
–––
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
63
8.8
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
––– ––– 3.1
MOSFET symbol
––– ––– 88
A showing the
integral reverse
––– ––– 1.0
p-n junction diode.
eV TJ = 25°C, IS = 8.8A, VGS = 0V
––– 31 46 ns TJ = 25°C, IF = 8.8A, VDD = 15V
e––– 17 26 nC di/dt = 100A/µs
www.irf.com

विन्यास 10 पेज
डाउनलोड[ IRF7807ZPBF Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
IRF7807ZPBFPower MOSFETInternational Rectifier
International Rectifier


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English