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IRF7799L2PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7799L2PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF7799L2PBF pdf
IRF7799L2PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage
250
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient –––
RDS(on)
Static Drain-to-Source On-Resistance –––
VGS(th)
Gate Threshold Voltage
3.0
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd
Qgodr
Gate-to-Drain Charge
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG
td(on)
Gate Resistance
Turn-On Delay Time
tr
td(off)
Rise Time
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
Coss Output Capacitance
Diode Characteristics
54
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
Ãg(Body Diode)
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
0.12
32
4.0
-13
–––
–––
–––
–––
–––
110
26
5.7
39
39
45
33
0.73
36.3
33.5
73.9
26.6
6714
606
157
5063
217
Typ.
–––
–––
–––
132
1412
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
i––– V/°C Reference to 25°C, ID = 2mA
38 mΩ VGS = 10V, ID = 21A
5.0 V VDS = VGS, ID = 250μA
––– mV/°C
20
1
100
-100
–––
μA
1mA
nA
S
VDS = 250V, VGS = 0V
VDS = 250V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VDS = 50V, ID = 21A
165
––– VDS = 125V
–––
nC
VGS = 10V
ID = 21A
––– See Fig. 9
–––
––– nC VDS = 16V, VGS = 0V
Ãi––– Ω
––– VDD = 125V, VGS = 10V
–––
–––
ns
ID = 21A
RG=6.2Ω
–––
––– VGS = 0V
––– VDS = 25V
––– pF ƒ = 1.0MHz
––– VGS = 0V, VDS = 1.0V, f=1.0MHz
––– VGS = 0V, VDS = 80V, f=1.0MHz
Max. Units
Conditions
35
140
1.3
198
2118
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
iV TJ = 25°C, IS = 21A, VGS = 0V
ins TJ = 25°C, IF = 21A, VDD = 50V
nC di/dt = 100A/μs
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 24, 2014

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