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IRF7606PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7606PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF7606PBF pdf
IRF7606PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-30 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.075 0.09
––– 0.130 0.15
VGS = - 10V, ID = -2.4A ƒ
VGS = -4.5V, ID = -1.2A ƒ
VGS(th)
Gate Threshold Voltage
-1.0 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance
2.3 ––– ––– S VDS = -10V, ID = -1.2A
IDSS
Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100
––– ––– 100
nA
VGS = -20V
VGS = 20V
Qg Total Gate Charge
––– 20 30
ID = -2.4A
Qgs Gate-to-Source Charge
––– 2.1 3.1 nC VDS = -24V
Qgd Gate-to-Drain ("Miller") Charge
––– 7.6 11
VGS = -10V, See Fig. 9 ƒ
td(on)
Turn-On Delay Time
––– 13 –––
VDD = -10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 20 –––
––– 43 –––
ns
ID = -2.4A
RG = 6.0
tf Fall Time
––– 39 –––
RD = 4.0ƒ
Ciss Input Capacitance
––– 520 –––
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 300 ––– pF VDS = -25V
––– 140 –––
ƒ = 1.0MHz, See Fig. 8
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– -1.8
––– -29
––– -1.2
43 64
50 76
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -2.4A, VGS = 0V ƒ
TJ = 25°C, IF = -2.4A
di/dt = -100A/µs ƒ
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
‚ ISD -2.4A, di/dt -130A/µs, VDD V(BR)DSS,
TJ 150°C
2
ƒ Pulse width 300µs; duty cycle 2%.
„ Surface mounted on FR-4 board, t
10sec.
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