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IRF7509PBF-1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF7509PBF-1
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRF7509PBF-1 pdf
IRF7509PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 30 —
P-Ch -30 —
—
—
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
N-Ch
P-Ch
— 0.059 —
— -0.039 —
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
N-Ch
P-Ch
—
—
—
—
0.09 0.110
0.14 0.175
0.17 0.20
0.30 0.40
Ω
VGS = 10V, ID = 1.7A „
VGS = 4.5V, ID = 0.85A „
VGS = -10V, ID =-1.2A „
VGS = -4.5V, ID =-0.6A „
N-Ch 1.0 —
P-Ch -1.0 —
—
—
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
N-Ch 1.9 —
P-Ch 0.92 —
—
—
S
VDS = 10V, ID = 0.85A „
VDS = -10V, ID = -0.6A
„
N-Ch — — 1.0
VDS = 24 V, VGS = 0V
P-Ch —
N-Ch —
—
—
-1.0
25
µA
VDS = -24V, VGS = 0V
VDS = 24 V, VGS = 0V, TJ = 125°C
P-Ch — — -25
VDS = -24V, VGS = 0V, TJ = 125°C
N-P –– — ±100
VGS = ± 20V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
––
—
––
—
––
—
7.8 12
7.5 11
1.2 1.8
1.3 1.9
2.5 3.8
2.5 3.7
nC
N-Channel
ID = 1.7A, VDS = 24V, VGS = 10V
„
P-Channel
ID = -1.2A, VDS = -24V, VGS = -10V
N-Ch — 4.7 —
P-Ch — 9.7 —
N-Channel
N-Ch — 10 —
VDD = 15V, ID = 1.7A, RG = 6.1Ω,
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
12
12
19
5.3
9.3
—
—
—
—
—
ns
RD = 8.7Ω
„
P-Channel
VDD = -15V, ID = -1.2A, RG = 6.2Ω,
RD = 12Ω
N-Ch — 210 —
N-Channel
P-Ch — 180
N-Ch — 80
—
—
pF
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
P-Ch — 87 —
N-Ch — 32 —
P-Ch — 42 —
P-Channel
VGS = 0V, VDS = -25V, ƒ = 1.0MHz
ƒ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch — — 1.25
IS
Continuous Source Current (Body Diode)
P-Ch —
N-Ch —
— -1.25
— 21
A
I SM
Pulsed Source Current (Body Diode) 
P-Ch — — -16
VSD Diode Forward Voltage
N-Ch —
P-Ch —
— 1.2
— -1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
N-Ch — 40 60 ns N-Channel
P-Ch — 30 45
TJ = 25°C, IF = 1.7A, di/dt = 100A/µs
N-Ch —
P-Ch —
48
37
72
55
nC
P-Channel
ƒ
TJ = 25°C, IF = -1.2A, di/dt = -100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
‚ N-Channel ISD 1.7A, di/dt 120A/µs, VDD V(BR)DSS, TJ 150°C
P-Channel ISD -1.2A, di/dt 160A/µs, VDD V(BR)DSS, TJ 150°C
ƒ Pulse width 300µs; duty cycle 2%.
„ Surface mounted on FR-4 board, t 10sec.
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
June 27, 2014

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