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DMN4468LSS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMN4468LSS
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMN4468LSS pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
DMN4468LSS
Value
30
±20
10
9
50
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RJA
RJc
TJ, TSTG
Value
1.52
82
8.2
-55 to +150
Units
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
Min
30
1.05
Typ
11
15
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—8
— 0.73
— 867
— 85
— 81
— 1.39
— 18.85
— 2.59
— 6.15
— 5.46
— 14.53
— 18.84
— 6.01
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Max
1.0
±100
1.95
14
20
0.95
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
m
VGS = 10V, ID = 11.6A
VGS = 4.5V, ID = 10A
S VDS = 5V, ID = 11.6A
V VGS = 0V, IS = 1A
pF
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
VGS = 10V, VDS = 15V,
ID =11.6A
ns
ns VDD = 15V, VGS = 10V,
ns RL = 1.3, RG = 3, ID = 1A
ns
DMN4468LSS
Document number: DS31773 Rev. 5 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated

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