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DMG9926USD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR - Diodes

भाग संख्या DMG9926USD
समारोह DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
मैन्युफैक्चरर्स Diodes 
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DMG9926USD pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Characteristic
Pulsed Drain Current (Note 6)
Steady
State
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
IDM
DMG9926USD
Value
20
8
8
6.7
30
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.3
96
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol Min
BVDSS
IDSS
IGSS
20
VGS(th)
0.5
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
0.5

Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by function temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Typ
19
23
29
7
867
85
81
1.29
8.8
1.2
3
13.2
12.6
64.8
21.7
Max
1
100
0.9
24
29
37
0.9

Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 20V, VGS = 0V
nA VGS = 8V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 8.2A
mVGS = 2.5V, ID = 3.3A
VGS = 1.8V, ID = 2A
S VDS = 10V, ID = 4A
V VGS = 0V, IS = 1A
pF
pF
pF
VDS = 15V, VGS = 0V
f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
nC
nC VGS = 4.5V, VDS = 10V, ID = 8.2A
nC
ns
ns VDD = 10V, VGS = 4.5V,
ns RL = 10, RG = 6
ns
DMG9926USD
Document number: DS31757 Rev. 5 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated

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