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DMG8822UTS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMG8822UTS
समारोह DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=DMG8822UTS?> डेटा पत्रक पीडीएफ

DMG8822UTS pdf
DMG8822UTS
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Min
20
-
-
0.5
Static Drain-Source On-Resistance
RDS (ON)
-
Forward Transfer Admittance
Diodes Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Notes: 5. Short duration pulse test used to minimize self-heating effects.
6. Guaranteed by design. Not subject to production testing.
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
19
22
28
7
0.7
841
88
81
1.24
9.6
1.4
2.1
7.8
21.1
38.6
10.1
Max
-
1.0
±100
0.9
25
29
37
-
0.9
-
-
-
-
-
-
-
-
-
-
-
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 20V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 8.2A
mVGS = 2.5V, ID = 3.3A
VGS = 1.8V, ID = 2.0A
S VDS = 10V, ID = 4A
V Is = 2.25A, VGS = 0V
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
pF
VDS =0V, VGS = 0V, f = 1MHz
nC
nC VGS = 4.5V, VDS = 10V,
nC ID = 8.2A
ns
ns VDD = 10V, VGS = 4.5V,
ns RL = 10, RG = 6
ns
30
VGS = 4.5V
VGS = 3.5V
VGS = 3.0V
VGS = 2.8V
20 VGS = 2.5V
VGS = 2.0V
VGS = 1.8V
10 VGS = 1.5V
0
0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
20
15 VDS = 5V
10
TA = 150°C
5 TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0 0.5
1 1.5 2 2.5 3
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMG8822UTS
Document number: DS31798 Rev. 2 - 2
2 of 6
www.diodes.com
June 2009
© Diodes Incorporated

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भाग संख्याविवरणविनिर्माण
DMG8822UTSDUAL N-CHANNEL ENHANCEMENT MODE MOSFETDiodes
Diodes


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