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DMG4800LSD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMG4800LSD
समारोह DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMG4800LSD pdf
DMG4800LSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
t<10s
Continuous Drain Current (Note 7) VGS = 4.5V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 8 & 9) L = 0.1mH
Repetitive Avalanche Energy (Notes 8 & 9) L = 0.1mH
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IS
IDM
IAR
EAR
Value
30
±25
7.5
6.0
9.8
7.7
6.4
5.0
8.4
6.6
2
42
17
14
Units
V
V
A
A
A
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
1.17
107
61
1.5
83
49
14.5
-55 to 150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ Max
BVDSS
IDSS
IGSS
30
——
— 1.0
— ±100
VGS(th)
0.8
1.6
RDS(on)
12
16
16
22
|Yfs| 8 —
VSD — 0.72 0.94
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
— 798 —
— 128 —
— 122 —
— 1.37 —
— 8.56 —
— 1.8 —
— 2.5 —
— 5.03 —
— 4.50 —
— 26.33 —
— 8.55 —
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Applicable to products manufactured with Data Code “1146” (Nov, 2011) and newer.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
DMG4800LSD
Document number: DS31858 Rev. 7 - 2
2 of 6
www.diodes.com
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
m
VGS = 10V, ID = 9A
VGS = 4.5V, ID = 7A
S VDS = 10V, ID = 9A
V VGS = 0V, IS = 1A
pF
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
VGS = 5V, VDS = 15V,
ID = 9A
ns
ns VDD = 15V, VGEN = 10V,
ns RL = 15, RG = 6, ID = 1A
ns
July 2014
© Diodes Incorporated

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