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DMG4800LFG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMG4800LFG
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMG4800LFG pdf
DMG4800LFG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Min
30
-
-
0.8
Static Drain-Source On-Resistance
RDS (ON)
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
11
15
8
0.7
798
128
122
1.37
9.47
1.87
5.60
5.03
4.50
26.33
8.55
Max
-
1.0
±100
1.5
17
24
-
1.0
-
-
-
-
-
-
-
-
-
-
-
Unit Test Condition
V VGS = 0V, ID = 250μA
μA VDS = 30V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = 250μA
mVGS = 10V, ID = 9A
VGS = 4.5V, ID = 7A
S VDS = 10V, ID = 9A
V VGS = 0V, IS = 1A
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS =0V, VGS = 0V, f = 1MHz
nC
nC VGS = 5V, VDS = 15V,
nC ID = 9A
ns
ns VDD = 15V, VGEN = 10V,
ns RL = 15, RG = 6, ID = 1A
ns
30
VGS = 10V
25 VGS = 4.5V
20
VGS = 3.0V
15
10
VGS = 2.5V
5
0 VGS = 2.0V
0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
30
25 VDS = 5V
20
15
10
5
0
1
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1.5 2 2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
DMG4800LFG
Document number: DS31785 Rev. 3 - 2
2 of 6
www.diodes.com
November 2009
© Diodes Incorporated

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