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DMG2302U डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMG2302U
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=DMG2302U?> डेटा पत्रक पीडीएफ

DMG2302U pdf
NOT RECOMMENDED FOR NEW DESIGN
USE DMN2056U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Steady
State
TA = +25°C
TA = +70°C
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)
Symbol
VDSS
VGSS
ID
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
20
±8
4.2
3.4
27
DMG2302U
Unit
V
V
A
A
Value
0.8
156
1.4
91
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
Min
20
0.4
Typ
Static Drain-Source On-Resistance
RDS(ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
13
0.75
594.3
64.5
57.7
1.5
7.0
0.9
1.4
7.4
9.8
28.1
6.7
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1‖ x 1‖ FR-4 PCB with high coverage 2oz. copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Max
100
±100
1.0
90
120
1.0
Unit
Test Condition
V VGS = 0V, ID = 10μA
nA VDS = 16V, VGS = 0V
nA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = 50μA
mVGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A
S VDS = 5V, ID = 3.6A
V VGS = 0V, IS = 1A
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
pF
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC VGS = 4.5V, VDS = 10V,
nC ID = 3.6A
ns
ns VDD = 10V, VGS = 4.5V,
ns RL = 2.78, RG = 1.0
ns
DMG2302U
Document number: DS31838 Rev. 5 - 3
2 of 6
www.diodes.com
October 2017
© Diodes Incorporated

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