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DMG1016UDW डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMG1016UDW
समारोह COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
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DMG1016UDW pdf
DMG1016UDW
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
330
379
-55 to +150
Units
mW
°C/W
°C
Maximum Ratings N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5)
Steady TA = +25°C
State TA = +85°C
Symbol
VDSS
VGSS
ID
Value
20
±6
1066
690
Units
V
V
mA
Maximum Ratings P-CHANNEL – Q2 (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5)
Steady TA = +25°C
State TA = +85°C
Symbol
VDSS
VGSS
ID
Value
-20
±6
-845
-548
Units
V
V
mA
Electrical Characteristics N-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min
@TC = +25°C
BVDSS
IDSS
IGSS
20
VGS(th)
RDS(ON)
0.5
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
Typ
0.3
0.4
0.5
1.4
0.7
60.67
9.68
5.37
736.6
93.6
116.6
5.1
7.4
26.7
12.3
Max
100
±1.0
1.0
0.45
0.6
0.75
1.2
Unit Test Condition
V VGS = 0V, ID = 250μA
nA VDS =20V, VGS = 0V
μA VGS = ±4.5V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 600mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
S VDS = 10V, ID = 400mA
V VGS = 0V, IS = 150mA
pF
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
pF
nC
nC
nC
VGS = 4.5V, VDS = 10V,
ID = 250mA
ns
ns VDD = 10V, VGS = 4.5V,
ns RL = 47, RG = 10,
ns
DMG1016UDW
Document number: DS31860 Rev. 6 - 2
2 of 9
www.diodes.com
January 2014
© Diodes Incorporated

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