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DMG1013UW डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMG1013UW
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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DMG1013UW pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Characteristic
Steady
State
TA = +25°C
TA = +85°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
DMG1013UW
Symbol
VDSS
VGSS
ID
IDM
Value
-20
±6
-0.82
-0.54
-6
Unit
V
V
A
A
Symbol
PD
RθJA
TJ, TSTG
Value
0.31
398
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
Min
-20
-
-
-0.5
-
Typ
-
-
-
-
0.5
0.7
1.0
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
|Yfs|
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
- 0.9
-0.8
- 59.76
- 12.07
- 6.36
- 622.4
- 100.3
- 132.2
- 5.1
- 8.1
- 28.4
- 20.7
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
-
-100
±2.0
-1.0
0.75
1.05
1.5
-
-1.2
-
-
-
-
-
-
-
-
-
-
Unit Test Condition
V VGS = 0V, ID = -250μA
nA VDS = -20V, VGS = 0V
μA VGS = ±4.5V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
S VDS = -10V, ID = -250mA
V VGS = 0V, IS = -150mA
pF
pF
pF
VDS = -16V, VGS = 0V,
f = 1.0MHz
pC
pC
pC
VGS = -4.5V, VDS = -10V,
ID = -250mA
ns
ns
ns
ns
VDD = -10V, VGS = -4.5V,
RL = 47, RG = 10,
ID = -200mA
DMG1013UW
Document number: DS31861 Rev. 3 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated

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