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DMG1012UW डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMG1012UW
समारोह N-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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DMG1012UW pdf
DMG1012UW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Characteristic
Steady
State
TA = +25°C
TA = +85°C
Symbol
VDSS
VGSS
ID
IDM
Value
20
±6
1.0
0.64
6
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 3)
Operating and Storage Temperature Range
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
Symbol
PD
RθJA
TJ, TSTG
Max
0.29
425
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol Min Typ
BVDSS
IDSS
IGSS
20
-
-
-
-
-
VGS(th)
RDS (ON)
|Yfs|
VSD
0.5
-
-
-
-
0.3
0.4
0.5
1.4
0.7
Ciss
Coss
Crss
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
- 60.67
- 9.68
- 5.37
- 736.6
- 93.6
- 116.6
- 5.1
- 7.4
- 26.7
- 12.3
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
-
100
±1.0
1.0
0.45
0.6
0.75
-
1.2
-
-
-
-
-
-
-
-
-
-
Unit Test Condition
V VGS = 0V, ID = 250μA
nA VDS = 20V, VGS = 0V
μA VGS = ±4.5V, VDS = 0V
V VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 600mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
S VDS = 10V, ID = 400mA
V VGS = 0V, IS = 150mA
pF
pF
VDS = 16V, VGS = 0V,
f = 1.0MHz
pF
pC
pC VGS = 4.5V, VDS = 10V,
pC ID = 250mA
ns
ns VDD = 10V, VGS = 4.5V,
ns
ns
RL = 47Ω, RG = 10Ω,
ID = 200mA
DMG1012UW
Document number: DS31859 Rev. 3 - 2
2 of 6
www.diodes.com
September 2013
© Diodes Incorporated

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