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DDTA144ELP डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP PRE-BIASED (R1=R2) SMALL SIGNAL TRANSISTOR - Diodes

भाग संख्या DDTA144ELP
समारोह PNP PRE-BIASED (R1=R2) SMALL SIGNAL TRANSISTOR
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DDTA144ELP pdf
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Supply Voltage
Input Voltage
Output Current (Io)
Characteristic
Symbol
VCC
VIN
IC(MAX)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Deration above +25°C
Thermal Resistance, Junction to Ambient Air (Note 5)
(Equivalent to one heated junction of PNP)
Operating and Storage Temperature Range
Symbol
PD
Pder
RJA
TJ, TSTG
DDTA144ELP
Value
-50
+10 to -40
-200
Unit
V
V
mA
Value
250
2
500
-55 to +150
Unit
mW
mW/°C
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Off Characteristics (Notes 6 & 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current (IBEX)
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, IO(off)
Emitter-Base Cut Off Current
Input Off Voltage
On Characteristics (Notes 6 & 7)
Input-On Voltage
Input Current
DC Current Gain
Output On Voltage
(Collector-Emitter Saturation Voltage)
Input Resistance
Resistance Ratio
Small Signal Characteristics
Current Gain-Bandwidth Product
Symbol Min Typ Max Unit
Test Condition
BVCBO
-50
V IC = -10µA, IE = 0
BVCEO
-50
V IC = -1mA, IB = 0
BVEBO
-4.5
V IE = -100µA, IC = 0
ICEX
-100
nA VCE = -50V, VEB(OFF) = 3V
IBL   -60 µA VCE = -50V, VEB(OFF) = 3V
ICBO

-100
nA VCB = -50V, IE = 0
ICES

-100
nA VCE = -50V, IB = 0
IEBO

-100
µA VEB = -4V, IC = 0
VI(off)
-300
mV VCC = -5V, IO = -100uA
VI(on)   -3 V VO = -0.3V, IO = -5mA
II
-180
µA VI = -5V
90    VCE =-5V, IC = -2.5mA
120    VCE = -5V, IC = -5mA
hFE
150    VCE = -5V, IC = -10mA
100    VCE = -5V, IC = -100mA
180    VCE = -5V, IC = -200mA
250 
  VCE = -5V, IC = -300mA
VO(on)

 -150 mV II = -1mA, IO = -10mA
-800 mV II = -1mA, IO = -40mA
R1 33 47 61 k
(R2/R1)
0.8
1
1.2
fT 250 MHz VCE = -10V, IE = -5mA, f = 100 MHz
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
7. Guaranteed by design.
DDTA144ELP
Document number: DS30844 Rev. 7 - 2
2 of 5
www.diodes.com
May 2015
© Diodes Incorporated

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