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1SS400CST5 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SWITCHING Diodes - WILLAS

भाग संख्या 1SS400CST5
समारोह SWITCHING Diodes
मैन्युफैक्चरर्स WILLAS 
लोगो WILLAS लोगो 
पूर्व दर्शन
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<?=1SS400CST5?> डेटा पत्रक पीडीएफ

1SS400CST5 pdf
WILLAS
1SS400CFMSTT1H52R0U-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
ELECTRICAL CHARASCOTEDR-1IS23T+IC CPUARCVKEASGE
Pb Free Product
(Ta =
Features
1
Batch
process
design,
excellent
power
dissipation
offers
25°C)
Package
1m
outline
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
o1p00tmimize board space.
0.1m
SOD-123H
Low power loss, high efficiency.
High current capability, low forward voltage drop.
0.146(3.7)
10µ
0.130(3.3)
0.012(0.3) Typ.
Hi1g0mh surge capability.
Guardring for overvoltage protection.
1µ
Ultra high-speed switching.
Sil1imcon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
100n
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
R1o0H0µS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
10n
Mechanical data
Ep10oµxy : UL94-V0 rated flame retardant
0 0.2 0.4 0.6 0.8 1.0 1.2
1.4
Case : MoldeFdOpRlaWsAticR,DSVOODL-T1A2G3HE : VF (V)
TerminalsF:iPgl.a1teFdoterwrmainrdalsc,hsaorldaecrtaebrliesptiecrsM
IL-STD
-7
,
50
1n 0.040(1.0)
0 20 40 60 80 100.0024(0.6)120
REVERSE VOLTAGE : VR (V)
0.031(0.8) Typ.
0.031(0.8) Typ.
Fig.2 Reverse characteristics
10 Method 2026
Polarity : Indicated by cathode band
3
Dimensions in inches and (millimeters)
Moun5ting Position : Any
Weight : Approximated 0.011 gram
2
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃1 ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive load, derate current by 20%
0.5
1
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum Rec0u.2rrent Peak Reverse Voltage
12 13 14 15 16
VRRM
20
30
40
50
60
18 10
115 120
80 100 150 200 V
Maximum RMS Voltage
VRMS
14
Maximum DC B0.1locking Voltage
02
4
6
8
10 VD12C
20
14
Maximum Average ForwaRrdERVeEcRtifSieEd VCOurLreTnAtGE : VR (V) IO
 
Peak
Forward
SFurigge.3CuCrreanpt 8a.3cmitsasnincglee
hbalef stiwnee-weanve
ter minals
IFSM
superimposed on10r0ated load (JEDEC method)
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction50Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
  20
TSTG
21 28 35 42
0
56 70
105 140
30
40 0 50
60 10
80 20 100
15300 200
FORWAR1D.0CURRENT : I F (mA)
Fig.4 Reverse rec overy time characteristics
 
30
 
 
-55 to +125
40
120
 
0.01µ-F65 to D+1.U7.5T.
 
 
-55 to +150
V
V
A
A
CHARACTERISTICS
Maximum Forwa1r0d Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blockin5g Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM1650-kMH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
IR
PU0L.5S0EGENERATOR0.70
OUTPUT 50
50
0.5
0.85 SAMPLING0.9
OSCILLOSCOPE
0.92
 
V
m
10
 
NOTES:
1- Measured at 1 M2HZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 1
  0.1 1
10 100 1000
PULSE WIDTH : TW (ms)
10,000
Fig.6 Reverse recovery time (trr)
measurement circuit
Fig.5 Surge current characteristics
2013-12
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP

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डाउनलोड[ 1SS400CST5 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
1SS400CST5SWITCHING DiodesWILLAS
WILLAS


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