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STD10NF30 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL POWER MOSFET - STMicroelectronics

भाग संख्या STD10NF30
समारोह N-CHANNEL POWER MOSFET
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=STD10NF30?> डेटा पत्रक पीडीएफ

STD10NF30 pdf
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
dv/dt(2).
Peak diode recovery voltage slope
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD= 80% V(BR)DSS
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb(1)
Thermal resistance junction-pcb
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or non-repetitive
(pulse width limited by TJmax)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
STD10NF30
Electrical ratings
Value
300
±20
10
6.3
40
103
12
-55 to 175
Unit
V
V
A
A
A
W
V/ns
°C
Value
1.45
50
Unit
°C/W
°C/W
Value
6
175
Unit
A
mJ
DS10271 - Rev 2
page 2/16

विन्यास 16 पेज
डाउनलोड[ STD10NF30 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
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