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PJA3434 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Pan Jit International

भाग संख्या PJA3434
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Pan Jit International 
लोगो Pan Jit International लोगो 
पूर्व दर्शन
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<?=PJA3434?> डेटा पत्रक पीडीएफ

PJA3434 pdf
PPJA3434
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic (Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
SYMBOL
BVDSS
VGS(th)
RDS(on)
IDSS
IGSS
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IS
TEST CONDITION
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
VGS=4.5V, ID=600mA
VGS=2.5V, ID=200mA
VGS=1.8V, ID=100mA
VGS=1.5V, ID=50mA
VGS=1.2V, ID=20mA
VDS=16V, VGS=0V
VGS=+8V, VDS=0V
VDS=10V, ID=600mA,
VGS=4.5V (Note 1,2)
VDS=10V, VGS=0V,
f=1.0MHZ
VDD=10V, ID=150mA,
VGS=4.0V,
RG=10Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=0.5A, VGS=0V
MIN. TYP. MAX. UNITS
20 - - V
0.3 0.65 1.0
V
- 280 400
- 350 650
- 400 800 mΩ
- 500 1200
- 1000 3000
- 0.01 1
uA
-
+0.5 +10
uA
- 1.4 -
- 0.22 -
- 0.21 -
- 67 -
- 19 -
-6-
- 2.8 -
20 -
23 -
- 23 -
nC
pF
ns
- - 0.5 A
0.87 1.3
V
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing.
July 14,2014-REV.00
Page 2

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